EL display panel, EL display apparatus, and method of manufacturing EL display panel

ABSTRACT

An EL display panel includes an organic EL device and a thin film semiconductor unit. The organic EL device includes a lower electrode, an organic light-emitting layer, and an upper electrode. The thin film semiconductor unit includes a first gate electrode, a gate insulating film, a first source electrode, a second drain electrode formed in a same layer as the first source electrode, a first power supply line formed in a same layer as the second drain electrode, and a first interlayer insulating film formed on the first source electrode and the second drain electrode. A gate line connected to the first gate electrode, a second power supply line formed in a same layer as the gate line and connected to the first power supply line, and an auxiliary line formed in a same layer as the second power supply line and connected to the upper electrode are included.

CROSS REFERENCE TO RELATED APPLICATION

This is a continuation application of PCT application No.PCT/JP2010/005850 filed on Sep. 29, 2010, designating the United Statesof America.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The present invention relates to EL display panels, EL displayapparatuses, and methods of manufacturing EL display panels, andparticularly relates to an EL display panel and an EL display apparatusused for an active-matrix display apparatus, and a method ofmanufacturing an EL display panel used for an active-matrix displayapparatus.

(2) Description of the Related Art

Thin film transistors (TFT) are used as a switching device for selectingpixel or a driving device for display device in active-matrix drivedisplay apparatuses such as liquid crystal display apparatuses andorganic EL display apparatuses.

TFTs are used for active-matrix substrate of display apparatuses, andactive research and development has been done for improving thecapability. In particular, along with the increase in the size andincreased definition of display apparatus, there is a demand for highdriving capability TFT. In this context, semiconductor thin films(polysilicon and microcrystalline silicon) crystallized for channellayers (active layers) have been attracting attention.

As a crystallizing process of a semiconductor thin film, instead of theconventional high temperature process technology in which a treatmenttemperature of 1000 degrees Celsius or higher is used, a low temperatureprocess utilizing a treatment temperature of 600 degrees Celsius orlower has developed. In the low temperature process, it is not necessaryto use expensive substrate such as highly heat resistant quartz, whichreduces manufacturing cost.

Laser annealing which uses laser beam for heating has attractedattention as a type of low temperature process. Laser annealing includeslocally heating and melting, by irradiating laser beam, non-singlecrystal semiconductor thin film such as amorphous silicon laminated onan insulating substrate with low heat resistance such as glass, andcrystallizing the semiconductor thin film during the cooling process.Mobility of carriers in the crystallized semiconductor thin filmincreases, improving capability of the thin film transistor (forexample, see Patent Literature 1: Japanese Unexamined Patent ApplicationPublication No. H07-235490).

Majority of thin film transistors have a bottom-gate structure in whichgate electrodes are arranged in a level lower than the channel layer.The following describes a conventional bottom-gate thin film transistorwith reference to FIGS. 23, 24A to 24C, and 25. FIG. 23 is a planar viewof the conventional thin film semiconductor device corresponding to onepixel of the display apparatus. FIG. 24A is a cross-sectional view ofthe conventional thin film semiconductor device for a display apparatusalong the line X1-X1′ in FIG. 23. FIG. 24B is a cross-sectional view ofthe conventional thin film semiconductor device for display apparatusalong the line X2-X2′ in FIG. 23. FIG. 24C is a cross-sectional view ofthe conventional thin film semiconductor device for display apparatusalong the line Y-Y′ in FIG. 23. FIG. 25 is a perspective viewcorresponding to FIG. 24A, illustrating major components of theconventional thin film semiconductor device for display apparatus fromthe cross section X1-X1′ in FIG. 23.

As illustrated in FIGS. 23, 24A to 24C, and 25, the conventional thinfilm semiconductor device 9 for display apparatus includes a gate line921 formed along the row direction of the pixel, a source line 922formed along the column direction of the pixel, and a thin filmtransistor 910 arranged at a position in which the gate line 921 and thesource line 922 cross each other.

As illustrated in FIG. 24A, the thin film transistor 910 is abottom-gate thin film transistor, and is a multilayer structureincluding a gate electrode 910G, a gate insulating film 930, asemiconductor layer (channel layer) 911, and one pair of sourceelectrode 910S and a drain electrode 910D sequentially formed on asubstrate 900.

As illustrated in FIGS. 23 and 24A, the gate electrode 910G extends fromthe gate line 921, and formed in a first metal layer ML1′ in which thegate line 921 is also formed. The gate insulating film 930 is formed onthe substrate 900 to cover the gate line 921 and the gate electrode910G. The semiconductor layer 911 is formed on the gate insulating film930 in an island shape overlapping the gate electrode 910G. One pair ofthe source electrode 910S and the drain electrode 910D is formedoverlapping part of the semiconductor layer 911 and arranged separatelyopposite to each other. The source electrode 910S and the drainelectrode 910D are formed in a second metal layer ML2′, in which thesource line 922 is also formed. Note that, an interlayer insulating film940 is laminated covering the thin film transistor 910, the gate line921, and the source line 922.

Here, when forming the semiconductor layer 911 in the bottom-gate thinfilm transistor 910 by forming amorphous silicon on the gate electrode910G and crystallizing the amorphous silicon by laser annealing, theheat of laser annealing radiates through the gate electrode 910G whenmelting the amorphous silicon. Accordingly, it is preferable that thegate electrode 910G is made of a material with small heat conductivityfor suppressing the radiation of the heat at the time of laser annealingfor crystallizing the semiconductor layer 911.

In the gate line 921, high line resistivity causes delay in signals oruneven display due to voltage drop. Particularly, increased drivingfrequency due to increased panel dimension makes the panel more likelyto be affected by the line resistivity. Therefore, it is preferable thatthe gate line 921 is composed of the material with low resistivity(specific resistance).

As described above, the gate electrode 910G and the gate line 921 areformed in the same layer. Thus, they are usually made of the samematerial. Thus, when the gate electrode 910G is made of the materialwith small heat conductivity in consideration of crystallizing thesemiconductor layer 911, the gate line 921 is also made of the materialwith small heat conductivity. Alternatively, when the gate line 921 ismade of the material with small resistivity in consideration of the lineresistance of the gate line 921, the gate electrode 910G is also made ofthe material with small resistivity.

However, most of metal with small heat conductivity has highresistivity. Thus, it is difficult to satisfy both the concern incrystallizing the semiconductor layer 911 and the concern in lineresistance of the gate line 921 at the same time.

In order to address this problem, the thin film semiconductor device fordisplay apparatus which solves these concerns has been proposed (seePatent Literature 2: Japanese Unexamined Patent Application PublicationNo. 2007-047808). Patent Literature 2 discloses a structure in which thegate line is divided into two portions for satisfying both the heatconductivity of the gate electrode and reduced resistance in the gateline.

More specifically, in the thin film semiconductor device for displayapparatus according to Patent Literature 2, the gate line includes anintegral portion integrally formed with the gate electrode and aseparate portion connected to the integral portion through a contacthole. In addition, the integrated portion of the gate linethree-dimensionally crosses the source line interposing the gateinsulating film in between. The integrated portion of the gate electrodeand the gate line are made of material with lower heat conductivity thanthe separate portion of the gate line, while the separate portion of thegate line is made of material with lower resistivity than the gateelectrode.

SUMMARY OF THE INVENTION

However, in the thin film semiconductor device for display apparatusdisclosed in Patent Literature 2, the integrated portion of the gateelectrode and the gate line is still made of the same material.Accordingly, in terms of the crystallization of the semiconductor layer,forming the gate electrode with the material having small heatconductivity increases the resistivity of the material composing theintegrated portion of the gate line, increasing the resistance of theintegrated portion of the gate line. As a result, there is a problemthat the line resistance of the entire gate line including theintegrated portion is not sufficiently reduced.

Furthermore, the integrated portion and the separate portion of the gateline are connected by two contact holes for each pixel. This causes anIR drop (voltage drop due to a product of the current I on the line andthe resistance R) at the connecting portion of the integrated portionand the separate portion. In addition, the gate line for one line isalternately connected to the integrated portion and the separateportion. Thus, there is a problem that even one bad connection in theconnected portion of the integrated portion and the separate portionresults in disconnection of all of the pixels in one line along the gateline.

Furthermore, the gate line and the power supply line connected to thethin film transistor three dimensionally crosses each other interposinga gate insulating film with a thickness of approximately 200 nm. Thus,when reducing thickness of the gate insulating film for improving thecapability of the thin film transistor, the interval between the gateline and the power supply line becomes even narrower, increasingparasitic capacitance between the lines.

Furthermore, when the display apparatus utilizing the thin filmsemiconductor device for display apparatus is used is an EL displayapparatus, an auxiliary line electrically connected to an upperelectrode (cathode) is formed for each pixel in the EL layer in which anorganic EL device is formed. As a result, there is a problem that theauxiliary line reduces the aperture ratio of the pixels.

The present invention has been conceived in view of these problems, andit is an object of the present invention to provide an EL display panel,an EL display apparatus, and a method of manufacturing an EL displaypanel which allows the gate electrode and the gate line to be composedof material suitable for each component, and reduces parasiticcapacitance between the gate line and the power supply line.

In order to solve the problems described above, an embodiment of the ELdisplay panel according to the present invention is an ElectroLuminescence (EL) display panel including: an EL unit; and a thin filmsemiconductor unit which controls luminescence at the EL unit, in whichthe EL unit includes: an anode electrode; a cathode electrode; and alight-emitting layer interposed between the anode electrode and thecathode electrode, the thin film semiconductor unit includes: asubstrate; a gate electrode formed above the substrate; a gateinsulating film formed above the substrate to cover the gate electrode;a semiconductor layer formed on the gate insulating film and above thegate electrode; a first electrode formed above the semiconductor layer;a second electrode formed in a same layer as the first electrode; afirst power supply line electrically connected to the second electrodeand formed in a same layer as the second electrode; a first interlayerinsulating film formed above the gate insulating film to cover the firstelectrode and the second electrode; a gate line formed above the firstinterlayer insulating film to cross the first power supply line, thefirst interlayer insulating film being in a layer different from a layerin which the gate electrode is formed; a second power supply line formedin a same layer as the gate line and side-by-side with the gate line;and an auxiliary line formed in a same layer as the second power supplyline and side-by-side with the second power supply line, and the gateelectrode and the gate line are electrically connected via a firstconductive portion passing through the gate insulating film and thefirst interlayer insulating film, the first power supply line and thesecond power supply line are electrically connected via a secondconductive portion passing through the first interlayer insulating film,and the auxiliary line is electrically connected to the cathodeelectrode.

According to the EL display panel of the present invention, the gateline and the gate electrode are formed in different layers. Thus, it ispossible to select different materials suitable for the gate line andthe gate electrode.

Furthermore, the gate line is formed above the first interlayerinsulating film and the first power supply line is formed below thefirst interlayer insulating film. Thus, it is possible to secure adistance between the gate line and the first power supply line. Withthis, it is possible to reduce parasitic capacitance between the gateline and the first power supply line.

Furthermore, the second electrode is electrically connected, and thefirst power supply line is electrically connected to the second powersupply line, and the first power supply line and the second power supplyline are arranged to cross each other. With this, the second electrodecan receive power supply from two directions; from the first powersupply line and the second power supply line. With respect to the IRdrop generated along the increase in screen size of the displayapparatus in the central region of the display area, it is possible toreduce the IR drop amount.

Furthermore, since the second power supply line and the auxiliary lineare formed in the same layer as the gate line and side-by-side with thegate line. Thus, it is possible to reduce the unevenness caused by thegate line on the first interlayer insulating film by the second powersupply line and the auxiliary line. With this, it is possible to improvethe flatness of the layer under the EL unit.

In addition, it is possible to supply power to the second electrode bytwo power supply lines, the first power supply line and the second powersupply line. Thus, it is possible to suppress disconnected pixels,thereby suppressing the unevenness in the display of the displayapparatus.

Furthermore, since the auxiliary line is formed in the same layer as thegate line, it is not necessary to form a separate auxiliary in the ELunit. This increases the aperture ratio of the pixels, therebyincreasing the life of the display panel.

FURTHER INFORMATION ABOUT TECHNICAL BACKGROUND TO THIS APPLICATION

The disclosure of PCT application No. PCT/JP2010/005850 filed on Sep.29, 2010, including specification, drawings and claims is incorporatedherein by reference in its entirety.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects, advantages and features of the invention willbecome apparent from the following description thereof taken inconjunction with the accompanying drawings that illustrate a specificembodiment of the invention. In the Drawings:

FIG. 1 is a partial cutout perspective view of an organic EL displaypanel according to the first embodiment of the present invention;

FIG. 2 illustrates a mother board of the thin film semiconductor arraydevice for display apparatus according to the first embodiment of thepresent invention;

FIG. 3 illustrates a circuit configuration of one pixel in an EL displaypanel according to the first embodiment of the present invention;

FIG. 4A is a schematic cross-sectional view of a cross sectional surfaceincluding a thin film transistor in a pixel of the EL display panelaccording to the first embodiment of the present invention;

FIG. 4B is a schematic cross-sectional view of a cross-sectional surfaceincluding an auxiliary line in a pixel of the EL display panel accordingto the first embodiment of the present invention;

FIG. 5 is a planar view of the EL display panel (partially see-through)according to the first embodiment of the present invention;

FIG. 6 is a planar view of the EL display panel (partially see-through)according to the first embodiment of the present invention;

FIG. 7 is a planar view of the EL display panel (partially see-through)according to the first embodiment of the present invention;

FIG. 8 is a planar view of the EL display panel (partially see-through)according to the first embodiment of the present invention;

FIG. 9 is a planar view of the EL display panel (partially see-through)according to the first embodiment of the present invention;

FIG. 10 is a planar view of the EL display panel (partially see-through)according to the first embodiment of the present invention;

FIG. 11A is a cross-sectional view of the EL display panel according tothe first embodiment of the present invention (a cross-sectional viewalong X1-X1′ in FIG. 9);

FIG. 11B is a cross-sectional view of the EL display panel according tothe first embodiment of the present invention (a cross-sectional viewalong X2-X2′ in FIG. 9);

FIG. 11C is a cross-sectional view of the EL display panel according tothe first embodiment of the present invention (a cross-sectional viewalong X3-X3′ in FIG. 8);

FIG. 12A is a perspective view of the EL display panel according to thefirst embodiment of the present invention in a cross-sectional surfacealong X4-X4′ in FIG. 9;

FIG. 12B is a perspective view of the EL display panel according to thefirst embodiment of the present invention in a cross-sectional surfacealong X3-X3′ in FIG. 10;

FIG. 13A is a cross-sectional view schematically illustrating asubstrate preparation process in the method of manufacturing the ELdisplay panel according to the first embodiment of the presentinvention;

FIG. 13B is a cross-sectional view schematically illustrating a firstmetal layer (gate electrode) forming process in the method ofmanufacturing the EL display panel according to the first embodiment ofthe present invention;

FIG. 13C is a cross-sectional view schematically illustrating the gateinsulating film forming process in the method of manufacturing the ELdisplay panel according to the first embodiment of the presentinvention;

FIG. 13D is a cross-sectional view schematically illustrating anon-crystalline semiconductor film forming process and a crystallinesemiconductor film forming process (laser radiation process) in themethod of manufacturing the EL display panel according to the firstembodiment of the present invention;

FIG. 13E is a cross-sectional view schematically illustrating asemiconductor layer forming process (an island growing process) in themethod of manufacturing the EL display panel according to the firstembodiment of the present invention;

FIG. 13F is a cross-sectional view schematically illustrating the fourthcontact hole in a method of manufacturing the EL display panel accordingto the first embodiment of the present invention;

FIG. 13G is a cross-sectional view schematically illustrating a secondmetal layer forming process in the method of manufacturing the ELdisplay panel according to the first embodiment of the presentinvention;

FIG. 13H is a cross-sectional view schematically illustrating a firstinterlayer insulating film forming process in the method ofmanufacturing the EL display panel according to the first embodiment ofthe present invention;

FIG. 13I is a cross-sectional view schematically illustrating a secondcontact hole forming process in the method of manufacturing the ELdisplay panel according to the first embodiment of the presentinvention;

FIG. 13J is a cross-sectional view schematically illustrating a thirdmetal layer process in the method of manufacturing the EL display panelaccording to the first embodiment of the present invention;

FIG. 14 is a diagram for illustrating the TFT characteristics of thethin film transistor in the EL display panel according to the firstembodiment of the present invention;

FIG. 15 is a cross-sectional view of the EL display panel according to avariation of the first embodiment of the present invention;

FIG. 16 is a planar view of the EL display panel (partially see-through)according to a second embodiment of the present invention;

FIG. 17 is a planar view of the EL display panel (partially see-through)according to the second embodiment of the present invention;

FIG. 18 is a cross-sectional view of the EL display panel according tothe second embodiment of the present invention (along X2-X2′ in FIG.16);

FIG. 19 is a diagram for illustrating the TFT characteristics of thethin film transistor in the EL display panel according to the secondembodiment of the present invention;

FIG. 20 is a cross-sectional view of the EL display panel according to avariation of the second embodiment of the present invention;

FIG. 21A is a cross-sectional perspective view of the organic EL displaypanel according to the present invention;

FIG. 21B is a cross-sectional perspective view illustrating anotherexample of the organic EL display panel according to the presentinvention;

FIG. 22 is an external perspective view illustrating an example of theEL display apparatus according to the present invention;

FIG. 23 is a planar view of the conventional thin film semiconductordevice for display apparatus in one pixel of the display apparatus;

FIG. 24A is a cross-sectional view of the conventional thin filmsemiconductor device for display apparatus (cross-sectional view alongX1-X1′ in FIG. 23);

FIG. 24B is a cross-sectional view of the conventional thin filmsemiconductor device for display apparatus (cross-sectional view alongX2-X2′ in FIG. 23);

FIG. 24C is a cross-sectional view of the conventional thin filmsemiconductor device for display apparatus (cross-sectional view alongY-Y′ in FIG. 23); and

FIG. 25 is a perspective view illustrating major components of theconventional thin film semiconductor device for display apparatus viewedfrom a cross-sectional surface along X1-X1′ in FIG. 23.

DESCRIPTION OF THE PREFERRED EMBODIMENT(S)

An aspect of the EL display panel according to the present invention isan Electro Luminescence (EL) display panel including: an EL unit; and athin film semiconductor unit which controls luminescence at the EL unit,in which the EL unit includes: an anode electrode; a cathode electrode;and a light-emitting layer interposed between the anode electrode andthe cathode electrode, the thin film semiconductor unit includes: asubstrate; a gate electrode formed above the substrate; a gateinsulating film formed above the substrate to cover the gate electrode;a semiconductor layer formed on the gate insulating film and above thegate electrode; a first electrode formed above the semiconductor layer;a second electrode formed in a same layer as the first electrode; afirst power supply line electrically connected to the second electrodeand formed in a same layer as the second electrode; a first interlayerinsulating film formed above the gate insulating film to cover the firstelectrode and the second electrode; a gate line formed above the firstinterlayer insulating film to cross the first power supply line, thefirst interlayer insulating film being in a layer different from a layerin which the gate electrode is formed; a second power supply line formedin a same layer as the gate line and side-by-side with the gate line;and an auxiliary line formed in a same layer as the second power supplyline and side-by-side with the second power supply line, and the gateelectrode and the gate line are electrically connected via a firstconductive portion passing through the gate insulating film and thefirst interlayer insulating film, the first power supply line and thesecond power supply line are electrically connected via a secondconductive portion passing through the first interlayer insulating film,and the auxiliary line is electrically connected to the cathodeelectrode.

According to this aspect, the gate line is arranged on the firstinterlayer insulating film which is in a layer different from the layerin which the gate electrode is formed. Thus, it is possible to selectdifferent materials suitable for the gate line and the gate electrode.

Furthermore, according to this aspect, the gate line is formed on thefirst interlayer insulating film and the first power supply line isformed below the first interlayer insulating film. Thus, it is possibleto secure a distance between the gate line and the first power supplyline by increasing the thickness of the first interlayer insulatingfilm. With this, it is possible to reduce parasitic capacitance betweenthe gate line and the first power supply line.

Furthermore, according to this aspect, the second electrode iselectrically connected to the first power supply line, and the firstpower supply line is electrically connected to the second power supplyline, and the first power supply line and the second power supply lineare arranged to cross each other. With this, with respect to the IR dropgenerated along the increase in screen size of the display apparatus inthe central region of the display area, it is possible to reduce the IRdrop amount.

Furthermore, since the second power supply line and the auxiliary lineare formed in the same layer as the gate line and side-by-side with thegate line. Thus, it is possible to reduce the unevenness caused by thegate line on the first interlayer insulating film by the second powersupply line and the auxiliary line. With this, it is possible to improvethe flatness of the thin film semiconductor unit.

In addition, it is possible to supply power to the second electrode bytwo power supply lines, the first power supply line and the second powersupply line. Thus, it is possible to suppress disconnected pixels,thereby suppressing the unevenness in the display of the displayapparatus.

Furthermore, according to this aspect, the auxiliary line is arranged inthe thin film semiconductor unit instead of the EL unit, andside-by-side with the gate line and the second power supply line. Inother words, the auxiliary line is arranged in a layer other than the ELunit, which is already used for arranging the gate line and the secondpower supply line. With this, it is possible to increase the flexibilityin designing the EL unit without narrowing the thin film semiconductorunit. Furthermore, it is not necessary for the auxiliary line to bearranged in the EL unit. Thus, the aperture ratio of each pixel isincreased, thereby increasing the amount of light emitted from the ELdisplay panel. In addition, the increased amount of emitted light allowsthe EL display panel to achieve a brightness equivalent to theconventional EL display panel even if the intensity of emitted light perunit area is decreased. Consequently, it is possible to implement along-life EL display panel.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the second power supply lineand the auxiliary line are formed at a level identical to or within apredetermined approximate value from the gate line, the second powersupply line and the auxiliary line are arranged between two adjacent thegate lines, and a width of a combination of the second power supply lineand the auxiliary line corresponds to a width of an interval between thetwo adjacent gate lines.

According to this aspect, it is possible to further increase theflatness of the EL display panel. More specifically, when the gate lineis formed on the first interlayer insulating film, the gate linesprotrudes from a region in which the gate line is not formed as much asthe thickness of the gate line without any adjustment. In contrast,according to this embodiment, the width of the combination of the secondpower supply line and the auxiliary line corresponds to a width of aninterval between the two adjacent gate lines. Therefore, the secondpower supply line and the auxiliary line can be used as structure forplanarizing the second interlayer insulating film. Thus, it is possibleto secure the flatness of the semiconductor thin film unit with a simplestructure.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that a distance from the secondpower supply line or the auxiliary line to the two adjacent gate linesis 4 μm or greater.

According to this aspect, it is possible to arrange the second powersupply line or the auxiliary line and the gate line without affectingeach other. Furthermore, it is possible to increase the flatness of thethin film semiconductor unit.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the second power supply lineand the auxiliary line are formed at a level identical to or within apredetermined approximate value from the gate line, and the second powersupply line and the auxiliary line are arranged near the gate line tofill an interval between two adjacent the gate lines.

According to this embodiment, it is possible to further increase theflatness of the thin film semiconductor unit.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the second power supply lineand the auxiliary line are formed at a level identical to or within apredetermined approximate value from the gate line, and

the second power supply line and the auxiliary line are wider than awidth of the first power supply line.

According to this embodiment, it is possible to further increase theflatness of the thin film semiconductor unit. Furthermore, it ispossible to set resistance of the second power supply line to be smallerthan the resistance of the first power supply line, therebysignificantly reducing the IR drop.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the second power supply lineand the auxiliary line have a uniform thickness, and formed along ashape of a surface under the power supply line and the auxiliary line.

According to this aspect, the second power supply line is substantiallytabular in planar view. With this, the second power supply line can be atabular line with a width wider than the width of the first power supplyline. Thus, it is possible to reduce the line resistance in the secondpower supply line. Thus, the power is supplied from the second powersupply line with low line resistance to the second electrode through thefirst power supply line. Thus, with respect to the IR drop generatedalong the increase in screen size of the display apparatus in thecentral region of the display area, it is possible to significantlyreduce the IR drop amount.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the semiconductor layer is ofN-channel type, and at least part of the second power supply line isarranged not to overlap the semiconductor layer.

According to this aspect, the N-channel type semiconductor layer isformed not to overlap the second power supply line, thereby suppressingthe induced carriers in the back channel. With this, it is possible tosuppress the generation of off-leakage current. Thus, it is possible toimplement an EL display panel with a thin film transistor with goodoff-characteristics.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the semiconductor layer is ofP-channel type, and at least part of the second power supply line isarranged to overlap the semiconductor layer.

According to this aspect, the P-channel type semiconductor layer isformed to overlap the second power supply line, thereby stabilizingelectric potential at the back channel. With this, it is possible tosuppress the generation of off-leakage current. Thus, it is possible toimplement an EL display panel with a thin film transistor with goodoff-characteristics.

Furthermore, in an aspect of the EL display panel according to thepresent invention, the first electrode is a source electrode, and thesecond electrode is a drain electrode. According to an aspect of the ELdisplay panel according to the present invention, the first electrodemay be a drain electrode, and the second electrode may be a sourceelectrode.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that capacitance per unit areaformed by the first interlayer insulating film interposed between alayer in which the gate line is formed and a layer in which the firstpower supply line is formed is smaller than capacitance per unit areaformed by the gate insulating film interposed between the layer in whichthe gate electrode is formed and the layer in which the first powersupply line is formed. In this case, in an aspect of the EL displaypanel according to the present invention, it is preferable thatcapacitance formed in the first interlayer insulating film is less than1.5×10-4 F/m2, and capacitance formed in the gate insulating film is1.5×10-4 F/m2 or greater.

According to this aspect, when the first interlayer insulating film andthe gate insulating film are formed by the same material, the thicknessof the first interlayer insulating film is greater than the thickness ofthe gate insulating film. With this, it is possible to set the intervalbetween the gate line on the first interlayer insulating film and thefirst power supply line under the first interlayer insulating film equalto or greater than the thickness of the gate insulating film. Thisfurther decreases the parasitic capacitance between the gate line andthe first power supply line.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the semiconductor layerincludes a polycrystalline semiconductor layer.

According to this aspect, the polycrystalline semiconductor film furtherincreases mobility of the carriers, and thus, it is possible toimplement an EL display panel including a thin film transistor with goodON characteristics.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that material composing the secondpower supply line and the auxiliary line includes one element selectedfrom among Al, Cu, and Ag. Furthermore, in an aspect of the EL displaypanel according to the present invention, it is preferable that thesecond power supply line and the auxiliary line are multilayered lines,and main lines composing the second power supply line and the auxiliaryline are made of one element selected from among Al, Cu, and Ag.

Furthermore, it is possible to form the second power supply line usingmetal material with low resistivity among materials for lines, therebyfurther reducing the electrical resistance of the second power supplyline.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the EL unit is an organic ELunit having an organic light-emitting layer as the light-emitting layer.

According to this aspect, it is possible to implement an organic ELdisplay panel with high display capability.

In addition, an aspect of the EL display apparatus according to thepresent invention includes the EL display panel.

According to this aspect, it is possible to implement an organic ELdisplay panel with high display capability.

An aspect of the EL display panel according to the present inventionincludes a first process of preparing a substrate; a second process offorming a gate electrode above the substrate; a third process of forminga gate insulating film above the substrate to cover the gate electrode;a fourth process of forming a semiconductor layer on the gate insulatingfilm and above the gate electrode; a fifth process of forming a firstelectrode above the semiconductor layer and forming, in a same layer asthe first electrode, a second electrode and a first power supply lineelectrically connected to the second electrode; a sixth process offorming a first interlayer insulating film above the gate insulatingfilm to cover the first electrode and the second electrode; a seventhprocess of forming a first contact hole through the gate insulating filmand the first interlayer insulating film, and forming a second contacthole through the first interlayer insulating film; an eighth process offorming, by forming a metal film above the first interlayer insulatingfilm and patterning the metal film, (i) a gate line electricallyconnected to the gate electrode through the first contact hole andcrossing the first power supply line, (ii) a second power supply lineelectrically connected to the first power supply line through the secondcontact hole and side-by-side with the gate line, and (iii) an auxiliaryline side-by-side with the second power supply line; a ninth process offorming a second interlayer insulating film to cover upper surfaces ofthe first interlayer insulating film, the second power supply line, andthe auxiliary line; a tenth process of forming a third contact holethrough the second interlayer insulating film above the auxiliaryelectrode; and an eleventh process of forming, above the secondinterlayer insulating film, an EL unit including an anode electrode, acathode electrode, and a light-emitting layer interposed between theanode electrode and the cathode electrode, in which, in the eleventhprocess, the cathode electrode and the auxiliary line are electricallyconnected through the third contact hole.

According to this aspect, the EL display panel according to the presentinvention can be easily manufactured.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the semiconductor layer formedin the fourth process is a non-crystalline semiconductor film, and thatthe method further includes, between the fourth process and fifthprocess, a process of crystallizing the non-crystalline semiconductorfilm by irradiating the non-crystalline semiconductor film with a laserto heat the non-crystalline semiconductor film to a predeterminedtemperature range.

According to this aspect, it is possible to form a semiconductor layerincluding the polycrystalline semiconductor film, and to manufacture anEL display panel with good ON characteristics.

Furthermore, in an aspect of the EL display panel according to thepresent invention, it is preferable that the EL unit is an organic ELunit having an organic light-emitting layer as the light-emitting layer.

According to this aspect, it is possible to manufacture an organic ELdisplay panel with high display capability.

The following describes embodiments and examples of an EL display panel,a manufacturing method of an EL display panel, and an EL displayapparatus with reference to the drawings. Note that the diagrams areschematic for explanation purpose, and ratios such as thicknesses andsize of the components are not always strictly accurate.

First Embodiment

First, the organic electro-luminescence (EL) panel according to thefirst embodiment of the present invention shall be described withreference to FIG. 1. FIG. 1 is a partial cutout perspective view of anorganic EL display panel according to the first embodiment of thepresent invention.

As illustrated in FIG. 1, the EL display panel 1 according to the firstembodiment of the present invention is an organic EL display panel(organic EL display), and includes an organic EL device 10 which is alight-emitting display device, and a thin film semiconductor arraydevice 20 composed of an active matrix substrate on which a thin filmtransistor and lines are formed.

The organic EL device 10 includes a lower electrode 12, an organiclight-emitting layer 13, and an upper electrode 14 that are sequentiallyformed on the thin film semiconductor array device 20. The organiclight-emitting layer 13 is composed of an electron transport layer, alight-emitting layer, and a hole transport layer, and others.

The thin film semiconductor array device 20 includes a pixel unit inwhich pixels 100 are arranged in a matrix (in rows and columns), andeach of the pixel 100 includes a pixel circuit 30 including a thin filmtransistor (not illustrated). The thin film semiconductor array devicefor display apparatus 20 includes gate lines 21 and source lines 22arranged in a matrix. Multiple metal lines are arranged in row directionas the gate lines 21, and multiple metal lines are arranged in columndirection as the source lines 22. In addition, the gate lines 21 and thesource lines 22 are orthogonal to each other, and each of them isconnected to each pixel circuit 30 and a control circuit (notillustrated).

Each pixel circuit 30 includes at least two thin film transistors areprovided as a switching device for selecting the pixel 100 and a drivingdevice for driving the organic EL device 10.

Note that, although not illustrated in FIG. 1, the thin filmsemiconductor array device for display apparatus 20 includes first powersupply lines 23A arranged in column direction and second power supplylines 23B arranged in row direction. The first power supply lines 23Aare arranged in parallel with the source lines 22 and connected todriving devices of pixels 100.

As such, the organic EL display panel 1 according to the firstembodiment utilizes active matrix technology in which display control isperformed for each pixel 100 partitioned by the gate lines 21 and thesource lines 22.

Next, an example of manufacturing the thin film semiconductor arraydevice for display apparatus according to the first embodiment of thepresent invention shall be described with reference to FIG. 2. FIG. 2illustrates a mother board of the thin film semiconductor array devicefor display apparatus according to the first embodiment of the presentinvention. As illustrated in FIG. 2, the mother board includes twodisplay units 200, and two thin film semiconductor array devices fordisplay apparatus 20 are obtained by cutting the mother board into twopieces. As described above, each display unit 200 includes the pixels100 arranged in a matrix (in rows and columns). Note that, in FIG. 2,only the pixels 100 at the corners of the display unit 200 areillustrated. In FIG. 2, it is assumed that the mother board includes twodisplay units 200, and an example in which two displays are obtainedfrom one mother board. However, the display unit 200 may be more thanone, or only one.

The following describes the circuit configuration of the pixel in the ELdisplay panel according to the first embodiment of the present inventionwith reference to FIG. 3. FIG. 3 illustrates a circuit configuration ofone pixel in an EL display panel according to the first embodiment ofthe present invention. In the first embodiment illustrated in FIGS. 3 to15, description is made using P-channel TFTs as an example of the firstthin film transistor and the second thin film transistor.

As illustrated in FIG. 3, each pixel 100 includes: a pixel circuit 30including a first thin film transistor 310, a second thin filmtransistor 320, and a capacitor 300C; and an organic EL device 10. Thefirst thin film transistor 310 is a selector transistor for selectingthe pixel 100 (switching transistor), and the second thin filmtransistor 320 is a driver transistor for driving the organic EL device10.

The first thin film transistor 310 includes a first source electrode310S, a first drain electrode 310D, and a first gate electrode 310G. Thefirst source electrode 310S is connected to the source line 22, and thefirst gate electrode 310G is connected to the gate line 21. Furthermore,the first drain electrode 310D is connected to the capacitor 300C andthe second gate electrode 320G of the second thin film transistor 320.When voltage is applied to the gate line 21 and the source line 22, thefirst thin film transistor 310 stores the voltage value applied to thesource line 22 in the capacitor 300C as display data.

The second thin film transistor 320 includes a second source electrode320S, a second drain electrode 320D, and a second gate electrode 320G.The second drain electrode 320D is connected to the anode (lowerelectrode) of the organic EL device 10, and the second source electrode320S is connected to the first power supply line 23A. The second gateelectrode 320G is connected to the first drain electrode 310D of thefirst thin film transistor 310. The second thin film transistor 320supplies current corresponding to the voltage value held by thecapacitor 300C to the anode of the organic EL device 10 through thesecond drain electrode 320D from the first power supply line 23A.

In the pixel 100 with the configuration described above, when the gateline 21 receives a gate signal turning on the first thing filmtransistor 310, the signal voltage supplied through the source line 22is written in the capacitor 300C. The hold voltage written in thecapacitor 300C is held for one frame period. With the hold voltage, theconductance of the second thin film transistor 320 changes in an analogmanner, and the driving current corresponding to luminescence gradationflows from the anode to the cathode of the organic EL device 10. Assuch, the organic EL device 10 emits light, and an image is displayed.

Next, the configuration of a pixel in the EL display panel 1 accordingto the first embodiment of the present invention shall be described withreference to FIGS. 4A and 4B. FIG. 4A is a cross-sectional diagramschematically illustrating a cross-sectional surface including the thinfilm transistor in one pixel of the EL display panel according to thefirst embodiment of the present invention. FIG. 4B is a cross-sectionaldiagram schematically illustrating a cross-sectional surface includingthe auxiliary line in one pixel of the EL display panel according to thefirst embodiment of the present invention.

As illustrated in FIG. 4A, each pixel included in the EL display panel 1according to the first embodiment of the present invention includes thefirst thin film transistor 310 which is a switching transistor forselecting the pixel, and the second thin film transistor 320 which is adriving transistor for driving the organic EL device 10. As describedabove, the first thin film transistor 310 includes the first sourceelectrode 310S, the first drain electrode 310D, and the first gateelectrode 310G. The second thin film transistor 320 includes the secondsource electrode 320S, the second drain electrode 320D, and the secondgate electrode 320G.

As illustrated in FIG. 4A, the first gate electrode 310G and the secondgate electrode 320G are formed in each pixel above the substrate 300.Furthermore, the gate insulating film 330 is formed to cover the firstgate electrode 310G and the second gate electrode 320G.

The first semiconductor layer 311 is formed above the first gateelectrode 310G and on the gate insulating film 330. The secondsemiconductor layer 321 is formed above the second gate electrode 320Gand on the gate insulating film 330.

One pair of the first source electrode 310S and the first drainelectrode 310D are separately arranged opposite to each other, eachcovering part of the first semiconductor layer 311. One pair of thesecond source electrode 320S and the second drain electrode 320D areseparately arranged opposite to each other, each covering part of thesecond semiconductor layer 321.

The first source electrode 310S of the first thin film transistor 310 iselectrically connected to the source line 22. The second sourceelectrode 320S of the second thin film transistor 320 is electricallyconnected to the first power supply line 23A.

In addition, the first interlayer insulating film (lower interlayerinsulating film) 340 is formed to cover the first thin film transistor310 and the second thin film transistor 320. The first interlayerinsulating film 340 serves as a passivation film for protecting thefirst thin film transistor 310 and the second thin film transistor 320,for example.

The second power supply line 23B is formed on the first interlayerinsulating film 340. The second power supply line 23B is electricallyconnected to the first power supply line 23A through a contact holeformed in the first interlayer insulating film 340.

The second interlayer insulating film (upper interlayer insulating film)350 is formed on the first interlayer insulating film 340 to cover thesecond power supply line 23B. The second interlayer insulating film 350serves as a planarizing film for planarizing an upper surface of thethin film semiconductor device for display apparatus (thin filmsemiconductor unit), for example. As such, a flat organic EL device 10is formed thereon.

The organic EL device 10 including the lower electrodes 12, the organiclight emitting layer 13 and the upper electrode 14 that are sequentiallyformed is formed on the second interlayer insulating film 350. The bank15 is formed on the second interlayer insulating film 350 at theboundary of adjacent pixels. The lower electrode 12 and the organiclight emitting layer 13 are formed in the opening between adjacent banks15.

Each lower electrode 12 is an anode electrode arranged for each pixel,and is formed on the second interlayer insulating film 350. The lowerelectrode 12 is electrically connected to the second drain electrode320D of the second thin film transistor through the contact hole throughthe first interlayer insulating film 340 and the second interlayerinsulating film 350.

The organic light emitting layer (organic EL layer) 13 is formed foreach color (sub-pixel column) or each sub pixel, and is made of apredetermined organic luminescent material.

The upper electrode 14 is a cathode electrode formed above the organiclight emitting layer 13 over multiple pixels, and is made of atransparent electrode such as ITO. In this embodiment, the upperelectrode 14 is a common electrode shared by all of the pixels. Notethat, the upper electrode 14 has a ground potential.

Furthermore, as illustrated in FIG. 4B, the auxiliary lines 25 areformed on the first interlayer insulating film 340. The auxiliary lines25 are electrically connected to the upper electrode 14 of the organicEL device 10, and prevents voltage drop in a central region of thedisplay screen of the upper electrode 14. The auxiliary lines 25 arecapable of functioning as an EL power supply line which applies apredetermined power supply to the upper electrode 14.

Note that, in this embodiment, no auxiliary line electrically connectedto the upper electrode 14 is formed in the organic EL layer L3.

The electrode portion 120 extends from the second drain electrode 320Dof the second thin film transistor 320. As illustrated in FIG. 4B, theelectrode portion 120 is electrically connected to the lower electrode12 of the organic EL device 10 through the relay electrode. With this,the second drain electrode 320D of the second thin film transistor 320and the lower electrode 12 are electrically connected.

In the EL display panel with the structure described above, thelowermost layer in which the thin film transistor is formed is referredto as a TFT layer (TFT unit) L1, the uppermost layer in which theorganic EL device 10 is formed is referred to as the organic EL layer(organic EL unit) L3, and the layer between the TFT layer L1 and theorganic EL layer L3 and in which the line is formed is referred to as aline layer (line portion) L2. In this line layer L2, the second powersupply line 23B, the auxiliary line 25 and others are formed asillustrated in FIGS. 4A and 4B, for example. In addition, in thisembodiment, the thin film semiconductor unit is composed of the TFTlayer L1 and the line layer L2.

Furthermore, in the TFT layer L1, the layer in which the first gateelectrode 310G and the second gate electrode 320G are formed is referredto as a first metal layer ML1. In addition, a layer in which a pair offirst source electrode 310S and the first drain electrode 310D and apair of the second source electrode 320S and the second drain electrode320D are formed is referred to as a second metal layer ML2. Accordingly,as illustrated in FIGS. 4A and 4B, in this embodiment, the source line22 is formed in the second metal layer ML2.

In the line layer L2, a layer in which the power supply line 23 isformed is referred to as a third metal layer ML3. Note that, asdescribed later, the gate line 21 is also formed in the third metallayer ML3 in addition to the second power supply line 23B and theauxiliary line 25.

In the first metal layer ML1 to the third metal layer ML3, the metalmaterial such as the electrodes and the line formed in the same metallayer can be formed by patterning the same metal film.

Next, the EL display panel 1 according to the first embodiment of thepresent invention shall be described with reference FIGS. 5 to 7. FIG. 5is a planar view of the EL display panel according to the firstembodiment of the present invention illustrating the components, seeingthrough the upper electrode and the light emitting layer of the organicEL device 10. FIG. 6 is a planar view of the EL display penal accordingto the first embodiment of the present invention, illustrating thecomponents, seeing through the organic EL layer L3 and the secondinterlayer insulating film. FIG. 7 is a planar view of the EL displaypanel according to the first embodiment of the present invention,illustrating the components, seeing through the organic EL layer L3, theline layer L2, and the first interlayer insulating film.

As illustrated in FIG. 5, the EL display panel 1 according to the firstembodiment of the present invention includes pixels arranged in a matrix(rows and columns), and a lower electrode 12 is arranged for each pixel100.

As illustrated in FIG. 6, the gate lines 21, the second power supplylines 23B, and the auxiliary lines 25 are arranged in parallel.

The second power supply line 23B and the auxiliary line 25 are arrangedbetween adjacent gate line 21, and the second power supply line 23B andthe auxiliary line 25 are formed in the same layer as the gate line 21and side-by-side with the gate line 21.

Note that, the gate line 21, the second power supply line 23B and theauxiliary line 25 are formed in the third metal layer ML3 in the linelayer L2 illustrated in FIGS. 4A and 4B. The gate line 21, the secondpower supply line 23B and the auxiliary line 25 are formed on the firstinterlayer insulating film 340 (not illustrated).

FIG. 7 illustrates the components in FIG. 6 with the gate lines 21, thesecond power supply lines 23B and the auxiliary lines 25 transmitted.Note that, in FIG. 6, the regions in which the gate line 21, the secondpower supply 23B and the auxiliary line 25 are formed are indicated inbroken lines.

As illustrated in FIG. 7, the EL display apparatus 1 according to thefirst embodiment of the present invention includes the source lines 22and the first power supply lines 23A arranged along the column directionof the pixels 100 in parallel.

The first power supply lines 23A and the source lines 22 is formed inthe second metal layer ML2 in the TFT layer L1 illustrated in FIG. 4A,and are arranged to three-dimensionally cross the gate lines 21, thesecond power supply lines 23B and the auxiliary line 25 formed in theline layer L2 which is the upper layer.

Next, the detailed configuration of the pixel 100 in FIGS. 5 to 7 shallbe described with reference to FIGS. 8 to 10, 11A, 11B, 11C, 12A and12B. FIGS. 8 to 10 correspond to each of the pixels 100 in FIGS. 5 to 7,respectively, and are planar views of the EL display panel according tothe first embodiment of the present invention. FIG. 11A is a crosssectional view along X1 to X1′ in FIG. 9, FIG. 11B is a cross sectionalview along X2 to X2′, and FIG. 11C is a cross sectional view alongX3-X3′ in FIG. 8. FIG. 12A is a perspective view of the EL display panelaccording to the first embodiment of the present invention along thecross sectional surface along X4-X4′ in FIG. 9. FIG. 12B is aperspective view of the EL display panel according to the firstembodiment of the present invention along the cross sectional surfacealong X3-X3′ in FIG. 10.

As illustrated in FIGS. 8 to 10, the EL display panel 1 according to thefirst embodiment of the present invention includes the thin filmsemiconductor device for display apparatus including a substrate 300, afirst thin film transistor 310, the second thin film transistor 320, agate line 21, a source line 22, a first power supply line 23A, a secondpower supply line 23B, an auxiliary line 25, and a first interlayerinsulating film 340.

The first thin film transistor 310 is a multilayered structure of afirst gate electrode 310G, a gate insulating film 330, a firstsemiconductor layer 311 (channel layer), one pair of the first sourceelectrode 310S and the first drain electrode 310D. The second thin filmtransistor 320 is a multilayered structure of the second gate electrode320G, the gate insulating film 330, the second semiconductor layer 321(channel layer), one pair of the second source electrode 320S and thesecond drain electrode 320D.

In this embodiment, the first thin film transistor 310, the second thinfilm transistor 320, the source line 22 and the first power supply line23A are formed in the TFT layer L1 illustrated in FIG. 4A. Furthermore,the gate line 21, the second power supply line 23B and the auxiliaryline 25 are formed in the line layer L2 illustrated in FIGS. 4A and 4B.

The following specifically describes the components of the EL displaypanel 1 according to the first embodiment of the present invention fromthe component in the lowermost layer.

As illustrated in FIGS. 10, 11A, 11B, and 12B, the first gate electrode310G and the second gate electrode 320 are patterned in island shapeabove the substrate 300. The first gate electrode 310G and the secondgate electrode 320G are formed in the first metal layer ML1 illustratedin FIG. 4A.

The gate insulating film 330 is formed on the substrate 330 to cover thefirst gate electrode 310G and the second gate electrode 320G asillustrated in FIGS. 11A and 11B. Furthermore, the gate insulating film330 is formed on the entire surface of the substrate 300 except for theregion in which the contact holes are formed.

The first semiconductor layer 311 is patterned in island shape on thegate insulating film 330 and above the first gate electrode 310G, asillustrated in FIGS. 10 and 11B. Furthermore, the second semiconductorlayer 321 is patterned on the gate insulating film 330 and above thesecond gate electrode 320G.

Note that, the first semiconductor layer 311 and the secondsemiconductor layer 321 may be N-channel type or P-channel type. In thisembodiment, the first semiconductor layer 311 and the secondsemiconductor layer 321 is covered by the second power supply line 23Bwith the positive electric potential. Thus, both the first semiconductorlayer 311 and the second semiconductor layer 321 are of P-channel type.

As illustrated in FIGS. 10 and 11B, the pair of the first sourceelectrode 310S and the first drain electrode 310D in the first thin filmtransistor 310 is formed above the first semiconductor layer 311overlapping the first semiconductor layer 311 and opposite to eachother. The first source electrode 310S and the first drain electrode310D are formed in the second metal layer ML2 in the TFT layer L1illustrated in FIG. 4A.

Note that, the term “overlapping” in this specification refers to apositional relationship overlapping each other when viewed in thevertical direction.

Furthermore, as illustrated in FIGS. 10 and 11B, the first drainelectrode 310D is formed to overlap the second gate electrode 320G ofthe second thin film transistor 320. The first drain electrode 310D andthe second gate electrode 320G are electrically connected by a fourthcontact portion 114 (fourth conductive portion). The fourth contactportion 114 is formed by burying conductive material in the fourthcontact hole formed in a thickness direction at a position where thefirst drain electrode 310D and the second gate electrode 320G overlap.In this embodiment, as illustrated in FIG. 11B, the fourth contactportion 114 is formed by burying part of the first drain electrode 310Din the fourth contact hole formed penetrating the gate insulating film330.

Note that, as illustrated in FIG. 11B, the fourth contact holecorresponding to the fourth contact portion 114 is formed in the gateinsulating film 330. In this embodiment, three fourth contact portions114 are formed as illustrated in FIG. 10.

As illustrated in FIGS. 10 and 11B, the pair of the second sourceelectrode 320S and the second drain electrode 320D in the second thinfilm transistor are formed above the second semiconductor layer 321overlapping the second semiconductor layer 321 and opposite to eachother. The first source electrode 310S and the first drain electrode310D are formed in the second metal layer ML2 in the TFT layer L1.

Furthermore, as illustrated in FIGS. 10 and 12B, the second drainelectrode 320D extends linearly along the column direction (verticaldirection), and an island-shaped electrode portion 120 wider than theextended portion is formed on a side opposite to the secondsemiconductor layer 321.

The electrode portion 120 is electrically connected to the lowerelectrodes 12 of the organic EL device 10 through the third contactportion 113 (third conductive portion) and a relay electrode in the samelayer as the gate line 21. The third contact portion 113 is formed byburying conductive material to the third contact hole formed through thefirst interlayer insulating film 340 and the second interlayerinsulating film 350 formed in the upper layer of the electrode portion120.

The source line 22 is linearly formed along the column direction of thepixels 100 (vertical direction), as illustrated in FIGS. 10, 11A, 11B,and 12B. The source line 22 is arranged to pass near the first thin filmtransistor 310, and is electrically connected to the first sourceelectrode 310S.

In this embodiment, the source line 22 and the first semiconductor layer311 are overlapped with each other such that part of the linear sourceline 22 serves as the first source electrode 310S. In this embodiment,the source lines 22 are formed in the TFT layer L1 illustrated in FIGS.4A and 4B, and are formed in the second metal layer ML2.

Note that, the source line 22 is formed on the gate insulating film 330except of for the portion overlapping with the first thin filmtransistor 310. In addition, the source line 22 is formed tothree-dimensionally cross the gate line 21, the second power supply line23B, and the auxiliary line 25 to be described later, through the firstinterlayer insulating film 340.

The first power supply line 23A is linearly formed along the columndirection (vertical direction) of the pixels 100 in the same manner asthe source line 22. The first power supply line 23A is arranged to passthrough the proximity of the second thin film transistor 320, and iselectrically connected to the second source electrode 320S.

In this embodiment, the first power supply line 23A and the secondsemiconductor layer 321 overlap each other such that part of the linearfirst power supply line 23A serves as the second source electrode 320S.The first power supply line 23A has a positive electric potential, andthe power is supplied to the second source electrode 320S in the secondthin film transistor 320. In this embodiment, the first power supplyline 23A is formed in the second metal layer ML2 in the TFT layer L1 inFIG. 4A.

Note that, the first power supply line 23A is formed on the gateinsulating film 330 except the portion overlapping the second thin filmtransistor 320. In addition, the first power supply line 23A is formedto three-dimensionally crosses the gate line 21 and the second powersupply line 23B to be described later through the first interlayerinsulating film 340.

The source line 22 and the first power supply line 23A with theconfiguration described above are arranged in parallel with each other.Furthermore, as described above, the source line 22 and the first powersupply line 23A are formed in the second metal layer ML2 in which thepair of the first source electrode 310S and the first drain electrode310D, and the pair of the second source electrode 320S and the seconddrain electrode 320D, and are also formed by pattering the same metalfilm.

As illustrated in FIGS. 11A and 11B, the first interlayer insulatingfilm 340 is formed to cover the first thin film transistor 310, thesecond thin film transistor 320, the source line 22, and the first powersupply line 23A. The first interlayer insulating film 340 is theuppermost layer of the TFT layer L1, and is formed to cover the entireelectrodes and lines formed underneath.

The gate line 21 is linearly formed along the row direction (horizontaldirection) of the pixels 100, as illustrated in FIG. 9. Furthermore, thegate line 21 is formed on the first interlayer insulating film 340 asillustrated in FIG. 11A, and is formed in the third metal layer ML3 inthe line layer L2 illustrated in FIG. 4A. More specifically, the gatelines 21 are formed in a layer different from the layer in which thefirst gate electrodes 310G and others are formed (the first metal layerML1) and different from the layer in which the first power supply line23A and the source line 22 are formed (the second metal layer ML2).

Furthermore, the gate line 21 is arranged to pass through the proximityof the first thin film transistor 310, and is electrically connected tothe first gate electrode 310G. In this embodiment, as illustrated inFIGS. 10 and 11A, the gate line 21 and the first gate electrode 310G arearranged to three-dimensionally cross each other, and at theintersection (overlapping portion), the gate line 21 and the first gateelectrode 310G are electrically connected through the first contactportion 111 (first conductive portion).

The first contact portion 111 is formed by burying conductive materialto the contact hole formed in the thickness direction in a positionwhere the gate line 21 and the first gate electrode 310G overlap eachother. In this embodiment, the first contact portion 111 is formed byburying part of the gate line 21 in the first contact hole through thefirst interlayer insulating film 34 and the gate insulating film 330 asillustrated in FIG. 11A.

The second power supply line 23B is linearly formed along the columndirection (horizontal direction) of the pixels 100. In addition, asillustrated in FIG. 11B, the second power supply line 23B is formed onthe first interlayer insulating film 340, and is formed in the thirdmetal layer ML3 in the line layer L2 illustrated in FIG. 4A. Morespecifically, the second power supply line 23B is formed in the samelayer as the gate line 21 as illustrated in FIG. 12A.

Furthermore, the second power supply line 23B is arranged between thegate line 21 and the auxiliary line 25 side-by-side with the gate line21 and the auxiliary line 25. Furthermore, the second power supply line23B is arranged to three-dimensionally cross the first power supply line23A, and at the intersection (overlapping portion), the second powersupply line 23B and the first power supply line 23A are electricallyconnected through the second contact portion 112 (second conductiveportion) formed in the thickness direction. Accordingly, in thisembodiment, the electric potential of the second power supply line 23Bis positive electric potential, which is the same as the first powersupply line 23A.

The second contact portion 112 is formed by burying conductive materialon the second contact hole formed through the first interlayerinsulating film 340 as illustrated in FIG. 11B. In this embodiment, thesecond contact portion 112 is formed by burying part of the second powersupply line 23B on the second contact hole. Furthermore, in thisembodiment, 16 second contact portions 112 (8 rows and 2 columns) areformed as illustrated in FIGS. 9 and 10.

Note that, in this embodiment, the material composing the second powersupply line 23B is composed of one device selected from Al (aluminum),Cu (copper), Ag (silver). Furthermore, the second power supply line 23Bmay be multilayered, and the main line composing the second power supplyline 23B may be made of one device selected among Al, Cu, and Ag.

The auxiliary line 25 is linearly formed along the row direction(horizontal direction) of the pixels 100, as illustrated in FIG. 9.Furthermore, as illustrated in FIG. 11C, the auxiliary line 25 is formedon the first interlayer insulating film 340, and is formed in the thirdmetal layer ML3 in the line layer L2 illustrated in FIG. 4B. Morespecifically, the auxiliary line 25 is formed in the same layer as thegate line 21 and the second power supply line 23B as illustrated in FIG.12A.

In addition, the auxiliary line 25 is arranged side-by-side with thesecond power supply line 23B as illustrated in FIG. 9. Furthermore, theauxiliary line 25 is arranged to three-dimensionally cross the firstpower supply line 23A, and is electrically connected to the upperelectrode 14 formed above the auxiliary line 25 as illustrated in FIG.11C, through the fifth contact portion 115 (fifth conductive portion)formed on the three-dimensional crossing (overlapping portion). Thus, inthis embodiment, the electric potential of the auxiliary line 25 is sameas the upper electrode 14.

As illustrated in FIG. 11C, the fifth contact portion 115 is formed byburying the conductive material on the fifth contact hole through thesecond interlayer insulating film 350 on the auxiliary line 25. In thisembodiment, the fifth contact portion 115 is formed by burying part ofthe upper electrode 14 on the fifth contact hole. Furthermore, in thisembodiment, 16 fifth contact portions 115 (8 rows and 2 columns) areformed as illustrated in FIGS. 8 to 10.

As illustrated in FIG. 11C, the organic EL device 10 is formed on thesecond interlayer insulating film 350. In this embodiment, the lowerelectrodes 12 of the organic EL device 10 are formed on the secondinterlayer insulating film 350. As illustrated in FIG. 8, each of thelower electrodes 12 is formed for a pixel 100, and is patternedexcluding the portion in which the fifth contact portion 115 is formed.Note that, the organic light emitting layer 13 and the upper electrode14 are sequentially formed on the lower electrodes 12.

As described above, in the EL display panel 1 according to the firstembodiment, the gate line 21, the second power supply line 23B and theauxiliary line 25 are arranged to orthogonally and three-dimensionallycross the source line 22 and the first power supply line 23A. Inaddition, the gate line 21, the second power supply line 23B and theauxiliary line 25 is formed in the third metal layer ML3 in the linelayer L2 on the first interlayer insulating film 340, and is formed in alayer different from the first gate electrode 310G and the second gateelectrode 320G formed in the first metal layer ML1 in the TFT layer L1.Furthermore, the gate line 21, the second power supply line 23B and theauxiliary line 24 are formed in a layer different from the second metallayer ML2 in the TFT layer L1 in which the source line 22 and the firstpower supply line 23A are formed, and different from the organic ELlayer L1 as well.

Next, the method of manufacturing the EL display panel 1 according tothe first embodiment of the present invention shall be described withreference to FIGS. 13A to 13J. FIGS. 13A to 133 are cross-sectionalviews schematically illustrating each process of the method ofmanufacturing the EL display device according to the first embodiment ofthe present invention. Note that, FIGS. 13A to 133 corresponds to thecross section along X2-X2′ in FIG. 9.

First, the substrate 300 is prepared as illustrated in FIG. 13A. Aninsulating substrate made of glass material such as quartz glass can beused for the substrate 300. Note that, an undercoating layer such assilicon oxide film or silicon nitride film may be formed on an uppersurface of the substrate 300 to prevent dispersion of impurity from thesubstrate 300. The thickness of the undercoating film is approximately100 nm.

Next, after washing the substrate with purified water and others,forming heat-resistant first metal film above an entire surface of thesubstrate 300 by sputtering, for example, and pattering the first metalfilm to a predetermined shape by photolithography, wet etching andothers to form the first gate electrode 310G and the second gateelectrode 320G as illustrated in FIG. 13B. Any of heat resistant metalsuch as Mo, W, Ta, Ti, and Ni or their alloy may be used as the materialfor the first metal film. In this embodiment, the first metal film madeof Mo with the thickness of approximately 100 nm is formed.

Next, as illustrated in FIG. 13C, the gate insulating film 330 is formedon the entire surface of the substrate 300 to cover the first gateelectrode 310G and the second gate electrode 320G. Silicon oxide film(SiO₂), silicon nitride film (SiN), or a composite film of them may beused as the material for the gate insulating film 330. In thisembodiment, the thickness of the gate insulating film 330 isapproximately 200 nm.

Subsequently, as illustrated in FIG. 13D, non-crystalline semiconductorfilm 301 is formed on the gate insulating film 330. In this embodiment,an amorphous silicon film is used as the non-crystalline semiconductorfilm 301, and the non-crystalline semiconductor film 301 is formed witha thickness of approximately 50 nm by plasma CVD. Note that, the gateinsulating film 330 and the non-crystalline semiconductor film 301 areformed by continuous plasma CVD while maintaining a vacuum state.

Subsequently, as shown in the arrows in FIG. 13D, a polysiliconsemiconductor film is obtained by irradiating laser such as excimerlaser to crystallize the non-crystalline semiconductor film 301 topolysilicon semiconductor film. More specifically, by irradiatingexcimer laser and others on the amorphous silicon film to raise thetemperature of the amorphous silicon film to a predetermined temperaturerange to crystallize the amorphous silicon film, and to increase thegrain size to form the polysilicon semiconductor film, for example.Here, the predetermined temperature range is, for example, from 1100 to1414 degrees Celsius. Furthermore, an average grain size of thepolysilicon semiconductor is 20 nm to 60 nm.

Here, the first gate electrode 310G and the second gate electrode 320Gare exposed to high temperature in the laser irradiating process. Forthis reason, it is preferable to form the first gate electrode 310G andthe second gate electrode 320G with a metal having a melting pointhigher than the upper limit (1414 degrees Celsius) of the temperaturerange. On the other hand, lines and electrodes formed in the secondmetal layer ML2 and the third metal layer ML3 may be formed with themetal having a melting point lower than the lower limit of thetemperature range (1100 degrees Celsius).

Note that, it is preferable to perform annealing at 400 to 500 degreesCelsius for 30 minutes as a pretreatment before irradiating laser.Furthermore, after irradiating laser, hydrogen plasma treatment invacuum for a few seconds to a few dozens seconds is preferred.

After that, as illustrated in FIG. 13E, the crystallized non-crystallinesemiconductor film 301 is patterned in an island shape to form the firstsemiconductor layer 311 and the second semiconductor layer 321.

Next, as illustrated in FIG. 13F, the fourth contact hole CH4 throughthe gate insulating film 330 is formed by photolithography, wet etching,and others, to electrically connect the first drain electrode 310D andthe second gate electrode 320G.

Subsequently, as illustrated in FIG. 13G, the second metal film (notillustrated) is formed by sputtering and others to cover the gateinsulating film 330, the first semiconductor layer 311 and the secondsemiconductor layer 321 and patterning the second metal film byphotolithography and wet etching to form the source line 22, the firstpower supply line 23A, the first source electrode 310S and the firstdrain electrode 310D, the second source electrode 320S, and the seconddrain electrode 320D in a predetermined shape. Here, the fourth contacthole CH4 is filled with the material composing the second metal film,forming the fourth contact portion 114.

Note that, the material composing the second metal film which includesthe source line 22, the first power supply line 23A, the first sourceelectrode 310S, the first drain electrode 310D, the second sourceelectrode 320S, and the second drain electrode 320D is preferably madeof metal with low resistivity. Metal such as one of Al, Cu, and Ag, oralloys of these metals can be used as the material for the second metalfilm. In this embodiment, the second metal film made of Al with thethickness of approximately 300 nm is formed. In addition, it ispreferable to form highly heat-resistant metal such as Mo is formed as abarrier metal on an upper side, lower side, or both of Al. The thicknessof the barrier metal is approximately 50 nm. Furthermore, in a casewhere it is necessary to further lower the resistance of lines, it ispreferable to use Cu instead of Al. Alternatively, increasing thethickness of the second metal film can lower the resistance, instead ofchanging the material.

Furthermore, it is preferable to form a low-resistance semiconductorfilm between the first source electrode 310S and the first semiconductorlayer 311, and between the first drain electrode 310D and the firstsemiconductor layer 311. An amorphous silicon film in which n-typedopant such as Phosphorus is doped as impurity, or an amorphous siliconfilm in which p-type dopant such as Boron is doped as impurity is usedfor the low-resistance semiconductor film. The thickness of the lowresistance semiconductor film is approximately 20 nm. Furthermore, anundoped (impurity is not intentionally doped) amorphous siliconsemiconductor film may be formed between the crystallized firstsemiconductor layer 311 and the low resistance semiconductor film (theamorphous silicon film in which impurity is doped) may be formed.Forming these films allows the desired TFT characteristics such asimprovement in TFT characteristics. Note that the same applies to thesecond thin film transistor 320.

Next, as illustrated in FIG. 13H, the first interlayer insulating film340 is formed above the entire surface of the substrate 300 by plasmaCVD to cover exposed electrodes and lines such as the first sourceelectrode 310S, the first drain electrode 310D, the second sourceelectrode 320S and the second drain electrode 320D. The first interlayerinsulating film 340 may be formed with a silicon oxide film, a siliconnitride film, or a laminated film of these films.

Subsequently, as illustrated in FIG. 13I, the second contact hole CH2through the first interlayer insulating film 340 to connect the firstpower supply line 23A and the second power supply line 23B byphotolithography, etching, and others. Here, though not illustrated, thefirst contact hole continuously passes through the first interlayerinsulating film 340 and the gate insulating film 330 to connect thefirst gate electrode 310G and the gate line 21.

Next, as illustrated in FIG. 13J, the third metal film is formed on thefirst interlayer insulating film 340 by sputtering and others, and thegate line 21, the second power supply line 23B and the auxiliary line 25are formed by patterning the third metal film into a predetermined shapeby photolithography and etching, for example. Here, the second contacthole CH2 and the first contact hole (not illustrated) are filled withthe material composing the third metal film, forming the second contactportion 112 and the first contact portion 111.

Note that, the material of the third metal film composing the gate line21, the second power supply line 23B, and the auxiliary line 25 ispreferably low resistance, and can be made of the metal same as thesecond metal film. For example, the third metal film can be formed byforming 300 nm of Al after forming 50 nm of Mo as a barrier metal.

Though not illustrated, the second interlayer insulating film 350 isformed by plasma CVD and others. The second interlayer insulating film350 may be formed of the material same as the first interlayerinsulating film 340. For example, a silicon oxide film, a siliconnitride film, or a laminated film of these films may be used.

Subsequently, the lower electrodes 12, the organic light emitting layer13, and the upper electrode 14 are sequentially formed above the secondinterlayer insulating film 350. Note that, during the process, the fifthcontact hold is formed in the second interlayer insulating film 350 toexpose the auxiliary line 25 to electrically connect the auxiliary line25 and the upper electrode 14 via the fifth contact hole.

As such, the EL display panel 1 according to the first embodiment of thepresent invention is manufactured.

As described above, in the EL display panel 1 according to the firstembodiment of the present invention, the gate line 21 is formed in theTFT layer L2 on the first interlayer insulating film 340, and isarranged in a separate layer, that is, different from the layer in whichthe first gate electrode 310G (and the second gate electrode 320G). Withthis, material suitable for the gate line 21 and the first gateelectrode 310G (and the second gate electrode 320G) can be selectedseparately.

Furthermore, in the EL display panel 1 according to the firstembodiment, the gate line 21 is arranged above the first interlayerinsulating film 340. Meanwhile, the first power supply line 23A (or thesource line 22) is arranged lower than the first interlayer insulatingfilm 340 and in the second metal layer ML2 (TFT layer L1) in the samelayer as the first drain electrode 310D and the second source electrode320S. With this, the interval between the gate line 21 and the firstpower supply line 23A (or the source line 22) is not dependent on theinterval between the first gate electrode 310G (or the second gateelectrode 320G) and the first drain electrode 310D (or the second sourceelectrode 320S), and corresponds to the thickness of the firstinterlayer insulating film 340 formed on the first drain electrode 310D(or the second source electrode 320S).

Here, the first interlayer insulating film 340 formed on the first drainelectrode 310D (or the second source electrode 320S) is for protectingthe surface of the thin film semiconductor unit (the thin filmsemiconductor device for display apparatus). Thus, even when thethickness of the first interlayer insulating film 340 is increased, itdoes not affect the capability of the thin film semiconductor portion.Accordingly, the interval between the gate line 21 and the first drainelectrode 310D (or the second source electrode 320S) can be increased byincreasing the thickness of the first interlayer insulating film 340.With this, the distance between the gate line 21 and the first powersupply line 23A (or the source line 22) can be secured. Thus, parasiticcapacitance between the gate line 21 and the first power supply line 23A(and the source line 22) can be reduced.

Furthermore, in the EL display panel 1 according to the firstembodiment, the first power supply line 23A electrically connected tothe second source electrode 320S and the second power supply line 23Bare arranged to three-dimensionally cross each other, and the firstpower supply line 23A and the second power supply line 23B areelectrically connected by the second contact portion 112. With this, thesecond source electrode 320S in the second thin film transistor 320 canreceive power supply in two directions; from the first power supply line23A in vertical direction and from the second power supply line 23B inhorizontal direction. Therefore, with respect to the IR drop generatedalong the increase in screen size of the display apparatus in thecentral region of the display area, it is possible to reduce the IR dropamount. As a result, it is possible to reduce the unevenness inbrightness of the display apparatus. Particularly, the organic ELdisplay panel is a current-driven display panel. Thus, it is preferableto lower the line resistance and reduce the IR drop to suppress theuneven brightness.

In addition, in the EL display panel 1 according to the firstembodiment, the second power supply line 23B and the auxiliary line 25are formed in the same layer as the gate line 21 on the first interlayerinsulating film 340, and arranged side-by-side with the gate line 21.With this, it is possible to fill the depressed portion of theunevenness formed by arranging the gate line 21 on the first interlayerinsulating film 340 with the second power supply line 23B and theauxiliary line 25.

More specifically, the second power supply line 23B and the auxiliaryline 25 can reduce the unevenness on the first interlayer insulatingfilm 340, improving the flatness of the thin film semiconductor unit. Asa result, it is possible to reduce the effect of the unevenness on thefirst interlayer insulating film 340 to the upper layer. Accordingly,flatness of the organic EL device 10 formed on the thin filmsemiconductor unit can be improved, thereby suppressing the unevennessin the brightness of the EL display panel. Furthermore, in this case, itis not necessary to increase the thickness of the planarizing film suchas the second interlayer insulating film formed under the organic ELdevice 10. Thus, it is possible to achieve a thinner EL display panel.

Furthermore, in the EL display panel 1 according to the firstembodiment, it is possible to provide power to the second thin filmtransistor 320 in one of the pixels from two directions; that is, fromthe first power supply line 23A in column direction and the second powersupply line 23B in row direction. With this, for example, even wherethere is a disconnection in the first power supply line 23A connected tothe second thin film transistor 320 in a certain pixel, it is possibleto supply power to the second thin film transistor 320 in the pixel bythe second power supply line 23B, the other power supply line. Morespecifically, the power can be supplied to one pixel from two powersupply lines. Accordingly, it is possible to suppress the defect inpixels, thereby suppressing unevenness in the display on the EL displaypanel.

As such, in this embodiment, the second power supply line 23B serves asa backup line for power supply, and also serves as a planarizing film.

Furthermore, in the EL display panel 1 according to the firstembodiment, the auxiliary lines 25 (EL power supply line) for preventingthe voltage drop in the central region of the display screen along withthe increase in the size of the screen of the EL display panel arearranged in the line layer L2, that is, in the thin film semiconductorunit instead of the EL unit (organic EL layer L3). In addition, theauxiliary line 25 is arranged side-by-side with the gate line 21 and thesecond power supply line 23B on the upper surface of the firstinterlayer insulating film 340. With this, it is possible to effectivelyuse the existing layer used for arranging the gate line 21 and thesecond power supply line 23B to arrange the auxiliary line 25. As such,by moving the auxiliary line 25 arranged in the EL unit to the existinglayer in the thin film semiconductor unit, it is possible to open up thespace conventionally used for arranging the auxiliary line in the ELunit without narrowing the thin film semiconductor unit. Therefore, itis possible to increase the flexibility in design of the EL unit, andincrease the aperture ratio of each pixel.

As such, in the EL display panel 1 according to the first embodiment,when capacitance for unit area formed by the gate line 21, the firstpower supply line 23A, and the first interlayer insulating film 340interposed by the gate line 21 and the first power supply line 23A isC_(PAS), and capacitance per unit area formed by the first gateelectrode 310G, the first power supply line 23A, and the gate insulatingfilm 330 interposed by the first gate electrode 310G and the first powersupply line 23A is C_(GI), C_(PAS)<C_(GI) is preferable.

Furthermore, it is preferable that the capacitance C_(PAS) per unit areaformed by the first interlayer insulating film 340 interposed by thethird metal layer ML3 in which the gate line 21 is formed and the secondmetal layer ML2 in which the first power supply line 23A is formed issmaller than the capacitance C_(GI) formed by the gate insulating film330 interposed by the first metal layer ML1 in which the first gateelectrode 310G is formed and the second metal layer ML2 in which thefirst power supply line 23A is formed.

With this, when it is assumed that the thickness of the first interlayerinsulating film 340 is d_(PAS) and the thickness of the gate insulatingfilm 330 is d_(GI), d_(PAS)>d_(GI) is satisfied when the firstinterlayer insulating film 340 and the gate insulating film 330 are madeof the same material. With this, it is possible to separate the intervalbetween the gate line 21 on the first interlayer insulating film 340 andthe first power supply line 23A under the first interlayer insulatingfilm 340 more than the thickness of the gate insulating film 330. Thus,it is possible to further reduce the parasitic capacitance between thegate line 21 and the first power supply line 23A. Furthermore, in thesame manner, the interval between the gate line 21 and the source line22 can also be separated more than the thickness of the gate insulatingfilm 330. Thus, it is possible to further reduce the parasiticcapacitance between the gate line 21 and the source line 22.

More specifically, it is preferable that the capacitance C_(PAS) formedby the first interlayer insulating film 340 is smaller than 1.5×10 (⁻⁴F/m²). Furthermore, it is preferable that the capacitance C_(GI) formedby the gate insulating film 330 is 1.5×10 (⁻⁴ F/m²) or more.

In addition, in the EL display panel 1 according to the firstembodiment, the second power supply line 23B is formed to cover thefirst semiconductor layer 311 and the second semiconductor layer 321 asillustrated in FIG. 9. Thus, it is preferable to compose both the firstsemiconductor layer 311 and the second semiconductor layer 321 to beP-channel type.

In the semiconductor layer (channel region) of the thin film transistor,lattice defect may occur at the time of manufacturing on the surface ofthe semiconductor layer and on the surface of the interlayer insulatingfilm covering the thin film transistor. When the lattice defect occurs,there is an unstable interface state, causing the electric potential ofthe back channel of the semiconductor layer to be unstable.

In the first embodiment, the P-channel first semiconductor layer 311 andthe second semiconductor layer 321 are formed to overlap the secondpower supply line 23B having the positive electric potential, forming aP-channel TFT with a back gate. With this, it is possible to stabilizethe electric potential in the back channel. As a result, as illustratedin FIG. 14, the first thin film transistor 310 and the second thin filmtransistor 320 which are P-channel TFT with the back gate can achievethe effect in suppressing the off-leakage current and reducing theeffect of external noise, comparable to the P-channel TFT without a backgate. This is because the back gate covers the upper side of the channelregion, and serves as a shield for the electromagnetic wave to theexternal noise. Therefore, it is possible to implement an EL displaypanel including the thin film transistor with good off characteristicsand highly resistant to external noise.

Note that, the effects can be achieved as long as at least part of thesecond power supply line 23B overlaps the first semiconductor layer 311and the second semiconductor layer 321. However, it is preferable thatthe second power supply line 23B and the first semiconductor layer 311or the second semiconductor layer 321 completely overlap.

In addition, in the EL display panel 1 according to the firstembodiment, the second power supply line 23B and the auxiliary line 25are formed with the thickness substantially identical to the gate line21, that is, at a level same as or close to the gate line 21, and it ispreferable to form the second power supply line 23B and the auxiliaryline 25 to have a width, in combination, corresponding to the widthbetween the two adjacent gate lines 21. Furthermore, it is preferablethat the distance from the second power supply line 23B or the auxiliaryline 25 to the two adjacent gate lines 21 is 4 μm or more. In addition,it is preferable that the distance between the second power supply line23B and the auxiliary line 25 is 4 μm or more.

In this embodiment, the gate line 21 is formed on the first interlayerinsulating film 340. Thus, without any adjustment, the region in whichthe gate line 21 is formed protrudes from the region in which the gateline 21 is not formed as much as the thickness of the gate line 21,forming a depressed portion between adjacent gate lines 21.

In response to this problem, by arranging the second power supply line23B and the auxiliary line 25 at a substantially same level as the gateline 21, and the second power supply line 23B and the auxiliary line 25to have the width corresponding to the interval between the two adjacentgate lines 21, it is possible to ensure flatness by the second powersupply line 23B and the auxiliary line 25. With this, it is possible toimprove the flatness of the organic EL device formed thereon, therebysuppressing the unevenness in luminescence in the EL display panel.

In addition, in the EL display panel 1 according to this embodiment, thesecond power supply line 23B and the auxiliary line 25 are preferablyformed at a level substantially equal to the gate line 21 and next tothe two adjacent gate lines 21 to fill the interval between the twoadjacent gate lines 21. Furthermore, the second power supply line 23Band the auxiliary line 25 are preferably arranged to fill the intervaland to be close to each other.

With this, the depressed portion between the adjacent gate lines 21 isburied by the second power supply line 23B, thereby securing flatness.

In addition, in the EL display panel according to the first embodiment,the second power supply line 23B is preferably formed at a levelsubstantially equal to the gate line 21, and has a width wider than thewidth of the first power supply line 23A.

With this, it is possible to improve the flatness of the thin filmsemiconductor unit. In addition, it is possible to reduce the resistanceof the second power supply line 23B to be lower than the first powersupply line 23A. Thus, it is possible to significantly reduce the IRdrop that occurs in the central region of the display region as the sizeof the screen increases.

In the EL display panel 1 according to the first embodiment, the secondpower supply line 23B and the auxiliary line 25 are preferably formedwith the uniform thickness, and along the shape of the surface of thestructure formed under the second power supply line 23B.

With this, the second power supply line 23B and the auxiliary line 25can be flat-shaped line with the width wider than the width of the firstpower supply line 23A. Thus, it is possible to form the second powersupply line 23B and the auxiliary line 25 as the low resistance line.Accordingly, the power can be supplied to the second source electrode320S through the second power supply line 23B with lower line resistanceand through the first power supply line 23A, thereby significantlyreducing the IR drop amount.

Variation of the First Embodiment

Next, the EL display panel 1′ according to a variation of the firstembodiment of the present invention shall be described with reference toFIG. 15. FIG. 15 is a cross-sectional view of the EL display panel 1′according to the variation of the first embodiment of the presentinvention. Note that, FIG. 15 corresponds to FIG. 11B, a cross sectionalview of the EL display panel 1 according to the first embodiment of thepresent invention.

The EL display panel 1′ according to this variation has the same basicconfiguration as the EL display panel 1 according to the firstembodiment of the present invention. Accordingly, in FIG. 15, the samereference numerals are assigned to the components identical to thecomponents illustrated in FIG. 11B and detailed description for thesecomponents are omitted or simplified. Furthermore, the configurationother than the illustration in FIG. 11B is identical to the firstembodiment.

The configurations of the first semiconductor layer in the first thinfilm transistor 310 and the second semiconductor layer in the secondthin film transistor 320 in the EL display panel 1′ according to thisvariation are different from the EL display panel 1 according to thefirst embodiment of the present invention.

As illustrated in FIG. 15, in the EL display panel 1′ according to thisvariation, the first semiconductor layer in the first thin filmtransistor 310 includes a first channel layer 311A composed of apolycrystalline semiconductor film and a second channel layer 311Bcomposed of a non-crystalline semiconductor film. The secondsemiconductor layer in the second thin film transistor 320 also includesa first channel layer 321A composed of a polycrystalline semiconductorfilm and a second channel layer 321B composed of a non-crystallinesemiconductor film.

The first channel layer 311A and the first channel layer 321A can becomposed of a polycrystalline semiconductor film formed by crystallizingan amorphous silicon film.

The second channel layer 311B and the second channel layer 321B can becomposed of an amorphous silicon film in the same manner as the firstsemiconductor layer 311 and the second semiconductor layer 321illustrated in FIG. 11B.

The first channel layer 311A and the first channel layer 321A composedof the polycrystalline semiconductor film can be formed by crystallizingthe amorphous silicon film through laser irradiation. In planar view,the first channel layer 311A (or the first channel layer 321A) and thesecond channel layer 311B (or the second channel layer 321B) have thesame shape, and are formed in island-shape on the gate insulating film330.

The EL display panel 1′ according to this variation can achieve the sameeffects as the EL display panel 1 according to the first embodiment ofthe present invention.

Furthermore, in the EL display panel 1′ according to this variation, thefirst semiconductor layer and the second semiconductor layer in thinfilm transistor are formed such that the first channel layer 311Acomposed of the polycrystalline semiconductor film (or the first channellayer 321A) is formed under the second channel layer 311B (or the secondchannel layer 321B) composed of the amorphous silicon film.

With this, in the first thin film transistor 310 and the second thinfilm transistor 320, it is possible to increase carrier mobility by thefirst channel layer 311A and the first channel layer 321A composed ofthe polycrystalline semiconductor film, thereby improving ONcharacteristics. In addition, the second channel layer 311B and thesecond channel layer 321B composed of the amorphous silicon film areformed on the semiconductor layer, thereby maintaining OFFcharacteristics.

Second Embodiment

Next, the EL display panel 2 according to the second embodiment of thepresent invention shall be described with reference FIGS. 16 to 18. FIG.16 is a planar view of the EL display panel according to the secondembodiment of the present invention with the organic EL layer L1 and thesecond interlayer insulating film transmitted. FIG. 17 is a planar viewof the EL display panel according to the second embodiment of thepresent invention with the organic EL layer L1, the line layer L2 andthe first interlayer insulating film transmitted. FIG. 18 is a crosssectional view along X2-X2′ in FIG. 16. Note that, the cross sectionalsurface along X1-X1′ in FIG. 16 is identical to FIG. 11A. Furthermore,in these diagrams, the configuration formed in the organic EL layer L3is omitted.

The EL display panel 2 according to the second embodiment of the presentinvention has the same basic configuration as the EL display panel 1according to the first embodiment of the present invention. Accordingly,in FIGS. 16 to 18, the same reference numerals are assigned to thecomponents identical to those illustrated in FIGS. 8 to 10, and thedetailed description for these components are omitted or simplified.

The EL display panel 2 according to the second embodiment is differentfrom the EL display panel 1 according to the first embodiment of thepresent invention in that the channel type of the first semiconductorlayer 311 and the second semiconductor layer 312 is N-channel type, andthe source electrode and the drain electrode in the first embodiment arethe drain electrode and the source electrode, respectively, in thesecond embodiment, and the configuration of the power supply line 23 isdifferent. Note that the rest of the configuration is identical to thefirst embodiment.

As illustrated in FIGS. 16 to 18, in the EL display panel 2 according tothe second embodiment of the present invention, the second power supplyline 23B is arranged not to overlap the first semiconductor layer 311and the second semiconductor layer 321, and includes a first opening 131formed on the first semiconductor layer 311 and a second opening 132formed on the second semiconductor layer 321.

In this embodiment, both the first semiconductor layer 311 and thesecond semiconductor layer 321 are of N-channel type.

The EL display panel 2 according to the second embodiment of the presentinvention can be manufactured in the same manner as in the firstembodiment. However, in this embodiment, it is necessary to form thefirst opening 131 and the second opening 132 in the second power supplyline 23B. The first opening 131 and the second opening 132 can be formedby forming openings in portions where the second power supply line 23Boverlaps with the first semiconductor 311 or the second semiconductorlayer 321 at the time of patterning the third metal film.

As such, according to the EL display panel 2 of the second embodiment ofthe present invention, in the same manner as the first embodiment, it ispossible to form the gate lines 21 and the first gate electrodes 310G asseparate layers. Thus, it is possible to select material suitable foreach layer. In addition, the distance between the gate lines 21 and thefirst power supply lines 23A can be secured. Thus, parasitic capacitancebetween the gate line 21 and the first power supply line 23A can bereduced.

Furthermore, the first power supply lines 23A and the second powersupply lines 23B are arranged crossing each other. Thus, the secondsource electrode 320S can receive power supply in two directions; fromthe first power supply line 23A in vertical direction and from thesecond power supply line 23B in horizontal direction. Therefore, withrespect to the IR drop generated along with the increase in screen sizeof the display apparatus in the central region of the display area, itis possible to reduce the IR drop amount.

Furthermore, the second power supply lines 23B and the auxiliary lines25 are formed in the same layer as the gate lines 21 and are arrangedside-by-side with the gate lines 21, thereby reducing the unevenness onthe first interlayer insulating film 340 due to the gate line 21, andimproving the flatness of the thin film semiconductor portion.

Furthermore, it is possible to supply power to one pixel by two powersupply lines, the first power supply line 23A and the second powersupply line 23B. Thus, it is possible to suppress disconnected pixels,thereby suppressing the unevenness in the display of the displayapparatus.

Furthermore, the auxiliary lines 25 are arranged in the thin filmsemiconductor unit instead of the EL unit. Therefore, it is possible toincrease the flexibility in design of the EL unit, and to increase theaperture ratio of each pixel.

Furthermore, the EL display panel 2 according to this embodimentachieves the following effects.

When the second power supply line 23B with positive electric potentialcovers the first interlayer insulating film 340 above the firstsemiconductor layer 311 and the second semiconductor layer 321 ofN-channel type, negative carriers are induced at the back channel of thefirst semiconductor layer 311 and the second semiconductor layer 321,generating off-leakage current. Therefore, a current is generatedwithout applying the gate voltage. As a result, the OFF characteristicsof the first thin film transistor 310 and the second thin filmtransistor 320 are decreased.

In contrast, in the EL display panel 2 according to this embodiment, thesemiconductor layer 311 and the second semiconductor layer 321 ofN-channel type are arranged not to overlap the second power supply line23B with positive electric potential, composing N-channel TFT without aback gate. As a result, as illustrated in FIG. 19, with regard to thefirst thin film transistor 310 and the second thin film transistor 320which are the N-channel TFTs without back gate, the second power supplyline 23B suppresses the induced carriers at the back channel, comparedto the N-channel TFT with a back gate. As a result, it is possible toreduce the off-leakage current at the first thin film transistor 310 andthe second thin film transistor 320. Therefore, it is possible toimplement the EL display panel 2 with thin film transistors with goodOFF characteristics.

Note that, the effect described above can be achieved as long as atleast part of the second power supply line 23B is arranged not tooverlap the first semiconductor layer 311 or the second semiconductorlayer 321. However, it is preferable to arrange the second power supplyline 23B not to overlap with the first semiconductor layer 311 or thesecond semiconductor layer 321 at all.

Variation of the Second Embodiment

Next, the EL display panel 2′ according to a variation of the secondembodiment of the present invention shall be described with reference toFIG. 20. FIG. 20 is a cross-sectional view of the EL display panel 2′according to the variation of the second embodiment of the presentinvention. Note that, FIG. 20 corresponds to FIG. 18, a cross sectionalview of the EL display panel 2 according to the second embodiment of thepresent invention.

The EL display panel 2′ according to this variation has the same basicconfiguration as the EL display panel 2 according to the secondembodiment of the present invention. Accordingly, in FIG. 20, the samereference numerals are assigned to the components identical to thecomponents illustrated in FIG. 18, and detailed description for thesecomponents are omitted or simplified. Furthermore, the configurationother than the illustration in FIG. 18 is identical to the secondembodiment.

The configurations of the first semiconductor layer in the first thinfilm transistor 310 and the second semiconductor layer in the secondthin film transistor 320 in the EL display panel 2′ according to thisvariation are different from the EL display panel 2 according to thesecond embodiment of the present invention.

As illustrated in FIG. 20, in the EL display panel 2′ according to thisvariation, the first semiconductor layer in the first thin filmtransistor 310 includes a first channel layer 311A composed of apolycrystalline semiconductor film and a second channel layer 311Bcomposed of a non-crystalline semiconductor film. The secondsemiconductor layer in the second thin film transistor 320 also includesa first channel layer 321A composed of a polycrystalline semiconductorfilm and a second channel layer 321B composed of a non-crystallinesemiconductor film.

The first channel layer 311A and the first channel layer 321A can becomposed of a polycrystalline semiconductor film formed by crystallizingan amorphous silicon film.

The second channel layer 311B and the second channel layer 321B arecomposed of amorphous silicon film.

The first channel layer 311A and the first channel layer 321A composedof the polycrystalline semiconductor film can be formed by crystallizingthe amorphous silicon film through laser irradiation. In planar view,the first channel layer 311A (or the first channel layer 321A) and thesecond channel layer 311B (or the second channel layer 321B) have thesame shape, and are formed in an island-shape on the gate insulatingfilm 330.

The EL display panel 2′ according to this variation can achieve the sameeffects as the EL display panel 2 according to the second embodiment ofthe present invention.

Furthermore, in the EL display panel 2′ according to this variation, thefirst semiconductor layer and the second semiconductor layer are formedsuch that the first channel layer 311A composed of the polycrystallinesemiconductor film (or the first channel layer 321A) is formed under thesecond channel layer 311B (or the second channel layer 321B) composed ofthe amorphous silicon film.

With this, in the first thin film transistor 310 and the second thinfilm transistor 320, it is possible to increase carrier mobility by thefirst channel layer 311A and the first channel layer 321A composed ofthe polycrystalline semiconductor film, thereby improving ONcharacteristics. In addition, the second channel layer 311B and thesecond channel layer 321B composed of the amorphous silicon film areformed on the semiconductor layer, thereby maintaining OFFcharacteristics.

Example 1

Next, an organic EL display panel as an example of the EL display panelaccording to the embodiments of the present invention shall be describedwith reference to FIGS. 21A and 21B. FIG. 21A is a cross-sectionalperspective view of an example of the organic EL display panel accordingto the present invention. FIG. 21B is a cross-sectional perspective viewof another example of the organic EL display panel according to thepresent invention.

As illustrated in FIGS. 21A and 21B, the pixels 100 of the organic ELdisplay panel include sub-pixels 100R, 100G, and 100B in three colors(red, green, and blue). Multiple sub-pixels 100R, 100G, and 100B arearranged in a depth direction of the FIGS. 21A and 21B (referred to assub-pixel columns).

FIG. 21A illustrates an example of line banks, and the sub-pixel columnsare separated by the banks 15. Each of the banks 15 illustrated in FIG.21A include a protrusion extending between the adjacent sub-pixelcolumns in a direction in parallel with the source lines 22, and isformed on the thin film semiconductor array device for display apparatus20. In other words, each of the sub-pixel columns is formed between theadjacent protrusions (that is, an opening of the bank 15).

The lower electrode 12 is formed on the thin film semiconductor arraydevice for display apparatus 20 (more specifically, on the secondinterlayer insulating film 350), and inside the opening of the bank 15for each sub-pixels 100R, 100G, and 100B. The organic light emittinglayer 13 is formed on the lower electrode 12 and inside the opening ofthe bank 15 for each sub-pixel column (that is, to cover the lowerelectrodes 12 in each column). The upper electrode 14 is continuouslyformed on the organic light-emitting layer 13 and the banks 15 to coverall of the sub-pixels 100R, 100G, and 100B.

FIG. 21B illustrates an example of pixel banks, and each sub-pixel 100R,100G, or 100B is separated by the banks 15. The banks 15 illustrated inFIG. 21B include protrusions extending in parallel with the gate lines21 and protrusions extending in parallel with the source lines 22 inparallel crossing each other. The sub-pixels 100R, 100G, and 100B areformed in the portions surrounded by the protrusions (that is, openingof the bank 15).

The lower electrode 12 is formed on the thin film semiconductor arraydevice for display apparatus 20 (more specifically, on the secondinterlayer insulating film 350), and inside the opening of the bank 15for each sub-pixel 100R, 100G, or 100B. Similarly, the organiclight-emitting layer 13 is formed on the lower electrodes 12 and insidethe openings of the bank 15 for each of the sub-pixels 100R, 100G, and100B. The upper electrode 14 is continuously formed on the organiclight-emitting layer 13 and the banks 15 (multiple protrusions) to coverall of the sub-pixels 100R, 100G, and 100B.

Note that, although not shown in FIGS. 21A and 21B, the thin filmsemiconductor array device for display apparatus 20 includes a pixelcircuit 30 for each of the sub-pixels 100R, 100G, and 1008. Furthermore,the sub-pixels 100R, 100G, and 100B are identical except the property ofthe organic light-emitting layer 13 (color of luminescence).

Example 2

Next, an example of the EL display apparatus to which the EL displaypanel according to the present invention is applied shall be describedwith reference to FIG. 22. FIG. 22 is an external perspective viewillustrating an example of the EL display apparatus according to thepresent invention.

As illustrated in FIG. 22, the EL display apparatus according to thepresent invention is a television set 400 in which the EL display panelaccording to the present invention is embedded.

As such, the EL display panel according to the present invention can beused as a flat panel display, for example. Note that, in addition totelevision sets, the EL display panel according to the present inventionis applicable to any display apparatus such as mobile phones andpersonal computers.

The EL display panel, the method of manufacturing the EL display panel,and the EL display apparatus according to the present invention havebeen described based on the embodiments and examples. However, thepresent invention is not limited to the embodiments and examples.

For example, in this embodiment, the first source electrode 310S and thefirst drain electrode 310D may be switched. More specifically, theconfiguration is a configuration in which the first source electrode310S illustrated in FIGS. 3 and 4 is a first drain electrode, and thefirst drain electrode 310D illustrated in FIGS. 3 and 4 are the firstsource electrode. Similarly, the second source electrode 320S and thesecond drain electrode 320D may be switched. More specifically, theconfiguration is a configuration in which the second source electrode320S illustrated in FIGS. 3 and 4 is a second drain electrode, and thesecond drain electrode 320D illustrated in FIGS. 3 and 4 are the secondsource electrode.

Furthermore, in the embodiments, the first source electrode 310S is partof the line-shaped source line 22. However, it is not limited to thisexample. For example, when patterning the source line 22, the extendedportion extending from part of the source line 22 in row direction ispatterned to electrically connect to the first source electrode 310Sseparately formed.

Similarly, in this embodiment, the second drain electrode 320D is partof the first power supply line 23A. However, the present invention isnot limited to this example. For example, when patterning the firstpower supply line 23A, the extended portion extending from part of thefirst power supply line 23A in row direction may be patterned toelectrically connect to the second drain electrode 320D separatelyformed.

Furthermore, in the embodiments, one second power supply line 23B isarranged between the adjacent gate lines 21. However, it is not limitedto this example. For example, multiple second power supply lines 23B maybe arranged between the adjacent gate lines 21.

Furthermore, in the embodiments, two thin film transistors are formedfor one pixel. However, it is not limited to this example. For example,three or more thin film transistors may be formed in one pixel. In thiscase, more than one second power supply lines 23B may be arranged tomatch the number of the thin film transistors. With this, it is possibleto supply desirable power to the thin film transistors which needs powersupply through the second power supply lines 23B.

Furthermore, in this example, the organic EL panel is described as theEL display panel according to the present invention. However, it is notlimited to this example. For example, the EL display panel according tothe present invention may be an inorganic EL panel.

Those skilled in the art will readily appreciate that many modificationsare possible in the exemplary embodiments without materially departingfrom the novel teachings and advantages of this invention. Accordingly,all such modifications are intended to be included within the scope ofthis invention.

INDUSTRIAL APPLICABILITY

The EL display panel according to the present invention is widelyapplicable to display apparatuses such as television set, personalcomputer, and mobile phone.

What is claimed is:
 1. An Electro Luminescence (EL) display panel,comprising: an EL unit; and a thin film semiconductor configured tocontrol luminescence at said EL unit, wherein said EL unit includes: ananode electrode, a cathode electrode, and a light-emitting layerinterposed between said anode electrode and said cathode electrode, saidthin film semiconductor includes: a substrate; a gate electrode abovesaid substrate; a gate insulating film above said substrate to coversaid gate electrode; a semiconductor layer on said gate insulating filmand above said gate electrode; a first electrode above saidsemiconductor layer; a second electrode in a same layer as said firstelectrode; a first power supply line electrically connected to saidsecond electrode and in a same layer as said second electrode; a firstinterlayer insulating film above said gate insulating film to cover saidfirst electrode and said second electrode; a gate line above said firstinterlayer insulating film to cross said first power supply line, saidfirst interlayer insulating film being in a layer different from saidgate electrode; a second power supply line being in a same layer as saidgate line and side-by-side with said gate line; and an auxiliary line ina same layer as said second power supply line and side-by-side with saidsecond power supply line, and said gate electrode and said gate line areelectrically connected via a first conductive portion passing throughsaid gate insulating film and said first interlayer insulating film,said first power supply line and said second power supply line areelectrically connected via a second conductive portion passing throughsaid first interlayer insulating film, and said auxiliary line iselectrically connected to said cathode electrode.
 2. The EL displaypanel according to claim 1, wherein said second power supply line andsaid auxiliary line are at a level one of identical to and within apredetermined approximate value from said gate line, said second powersupply line and said auxiliary line are arranged between two adjacentgate lines, and a width of a combination of said second power supplyline and said auxiliary line corresponds to a width of an intervalbetween said two adjacent gate lines.
 3. The EL display panel accordingto claim 2, wherein a distance from one of said second power supply lineand said auxiliary line to said two adjacent gate lines is at least 4μm.
 4. The EL display panel according to claim 1, wherein said secondpower supply line and said auxiliary line are at a level one ofidentical to and within a predetermined approximate value from said gateline, and said second power supply line and said auxiliary line arearranged near said gate line to fill an interval between two adjacentgate lines.
 5. The EL display panel according to claim 1, wherein saidsecond power supply line and said auxiliary line are at a level one ofidentical to and within a predetermined approximate value from said gateline, and said second power supply line and said auxiliary line arewider than a width of said first power supply line.
 6. The EL displaypanel according to claim 2, wherein said second power supply line andsaid auxiliary line have a uniform thickness, and are along a shape of asurface under said power supply line and said auxiliary line.
 7. The ELdisplay panel according to claim 1, wherein said semiconductor layer isof N-channel type, and at least a part of said second power supply lineis arranged not to overlap said semiconductor layer.
 8. The EL displaypanel according to claim 1, wherein said semiconductor layer is ofP-channel type, and at least a part of said second power supply line isarranged to overlap said semiconductor layer.
 9. The EL display panelaccording to claim 1, wherein said first electrode is a sourceelectrode, and said second electrode is a drain electrode.
 10. The ELdisplay panel according to claim 1, wherein said first electrode is adrain electrode, and said second electrode is a source electrode. 11.The EL display panel according to claim 1, wherein a capacitance perunit area of said first interlayer insulating film interposed between alayer of said gate line and a layer of said first power supply line issmaller than a capacitance per unit area of said gate insulating filminterposed between a layer of said gate electrode and the layer of saidfirst power supply line.
 12. The EL display panel according to claim 1,wherein a capacitance of said first interlayer insulating film is lessthan 1.5×10-4 F/m2, and a capacitance of said gate insulating film is atleast 1.5×10-4 F/m2.
 13. The EL display panel according to claim 1,wherein said semiconductor layer includes a polycrystallinesemiconductor layer.
 14. The EL display panel according to claim 1,wherein material composing said second power supply line and saidauxiliary line includes one element selected from among Al, Cu, and Ag.15. The EL display panel according to claim 14, wherein said secondpower supply line and said auxiliary line are multilayered lines, andmain lines composing said second power supply line and said auxiliaryline include one element selected from among Al, Cu, and Ag.
 16. The ELdisplay panel according to claim 1, wherein said EL unit is an organicEL unit having an organic light-emitting layer as the saidlight-emitting layer.
 17. An EL display apparatus, comprising: the ELdisplay panel according to claim
 1. 18. A method of manufacturing anElectro Luminescence (EL) display panel, comprising: preparing asubstrate; forming a gate electrode above the substrate; forming a gateinsulating film above the substrate to cover the gate electrode; forminga semiconductor layer on the gate insulating film and above the gateelectrode; forming a first electrode above the semiconductor layer andforming, in a same layer as the first electrode, a second electrode anda first power supply line electrically connected to the secondelectrode; forming a first interlayer insulating film above the gateinsulating film to cover the first electrode and the second electrode;forming a first contact hole through the gate insulating film and thefirst interlayer insulating film, and forming a second contact holethrough the first interlayer insulating film; forming, by forming ametal film above the first interlayer insulating film and patterning themetal film, a gate line electrically connected to the gate electrodethrough the first contact hole and crossing the first power supply line,a second power supply line electrically connected to the first powersupply line through the second contact hole and side-by-side with thegate line, and an auxiliary line side-by-side with the second powersupply line; forming a second interlayer insulating film to cover uppersurfaces of the first interlayer insulating film, the second powersupply line, and the auxiliary line; forming a third contact holethrough the second interlayer insulating film above the auxiliaryelectrode; and forming, above the second interlayer insulating film, anEL unit including an anode electrode, a cathode electrode, and alight-emitting layer interposed between the anode electrode and thecathode electrode, wherein, in said forming of the EL unit, the cathodeelectrode and the auxiliary line are electrically connected through thethird contact hole.
 19. The method of manufacturing the EL display panelaccording to claim 18, wherein the semiconductor layer is anon-crystalline semiconductor film, and said method further comprises,between said forming of the semiconductor layer and said forming of thefirst electrode, crystallizing the non-crystalline semiconductor film byirradiating the non-crystalline semiconductor film with a laser to heatthe non-crystalline semiconductor film to a predetermined temperaturerange.
 20. The method of manufacturing the EL display panel according toclaim 18, wherein the EL unit is an organic EL unit having an organiclight-emitting layer as the light-emitting layer.